Laser desorption ionisation time-of-flight mass spectrometry of glasses and amorphous films from Ge-As-Se system
| Autoři | |
|---|---|
| Rok publikování | 2016 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | JOURNAL OF THE AMERICAN CERAMIC SOCIETY |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://onlinelibrary.wiley.com/doi/10.1111/jace.14366/full |
| Doi | http://dx.doi.org/10.1111/jace.14366 |
| Obor | Analytická chemie, separace |
| Klíčová slova | LDI TOFMS; chalcogenide glasses; structure; clusters; germanium; arsenic; selenium |
| Popis | Laser Desorption Ionization Time-of-Flight Mass Spectrometry was exploited for the characterization of Ge-As-Se chalcogenide glasses and corresponding thin films fabricated by using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters’ stoichiometry. The clusters observed were Asb+ (b = 1-3), Se2-, binary AsbSe+ (b = 1-3), AsbSec- (b = 1-3,c = 1-4), Ge2Sec- (c = 2-3), As3Se2+, Ge2Asb- (b = 2-3), Ge3Asb- (b = 1-2), Ge3Se4-, As5Sec- (c = 4-5), GeAsSe4-, GeaAsSe5- (a = 1-4), GeAs2Se3-, GeAs3Se2-, Ge2As2Se2-, Ge2AsSec- (c = 6-7), and GeAs3Sec- (c = 5-6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films. |
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