Atomic layer deposition of copper (I) bromide wide bandgap semiconductors
| Autoři | |
|---|---|
| Rok publikování | 2019 |
| Druh | Konferenční abstrakty |
| Fakulta / Pracoviště MU | |
| Citace | |
| Popis | Zinc blende-structured copper (I) halides are wide-band, direct gap semiconductors with high exciton binding energies which have been investigated for some time for their application to optoelectronic devices. The possibility of stable, room temperature, UV emission, together with high biexciton binding energies, enables optoelectronic effects such as bistability and four-wave mixing with the potential for new short wavelength devices. For optoelectronic devices it is important to be able to control the deposition either in thin film form or as arrays of nanocrystallites. Atomic Layer Deposition (ALD) is capable of enabling uniform and well controlled deposition of thin films and nanocrystallites. This technique has previously been applied to copper chloride CuCl. Deposition using an ALD-like process has also been reported using different precursors. This paper reports on the deposition of copper bromide CuBr using [Bis(trimethylsilyl)acetylene]-(hexafluoroacetylacetonato)copper(I) and pyridine-HBr as precursors. The crystal structural, chemical composition and optoelectronic properties of the CuBr films are reported and the deposition is compared to that of CuCl. |
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