The hydrogen effusion induced structural changes and defects in hydrogenated amorphous SiGe films: dependence upon the microstructure
| Autoři | |
|---|---|
| Rok publikování | 1998 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Journal of Non-Crystalline Solids |
| Fakulta / Pracoviště MU | |
| Citace | |
| Doi | http://dx.doi.org/10.1016/S0022-3093(98)00186-0 |
| Klíčová slova | hydrogen; SiGe; hydrogen effusion |
| Popis | To better understand the relations between deposition conditions, microstructure, H incorporation and the optoelectronics properties of undoped a-Si(1-x)Ge(x):H alloys, we performed a comparative study of samples (with x approximate to 0.5) prepared by plasma enhanced chemical vapour deposition at total pressures varying from 900 to 2200 mTorr. The hydrogen bonding, detected by infra-red absorption measurements and H thermal desorption experiments, as well as the optoelectronic properties, determined by a combination of standard optical and photothermal deflection spectroscopy measurements, were found to depend on the total pressure. The results obtained in the as-deposited state and after annealing at increasing temperatures are analysed as a whole in terms of specific local H bonding environment, degree of order, and defects. (C) 1998 Elsevier Science B.V. All rights reserved. |