Origin of the metastability of phosphorus or boron doped a-Si:H films

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SŤAHEL Pavel SLÁDEK Petr ROCA I CABARROCAS Pere ŠŤASTNÝ Jiří

Rok publikování 2000
Druh Článek ve sborníku
Konference Electronic Devices and Systems Y2K - Proceedings
Fakulta / Pracoviště MU

Pedagogická fakulta

Citace
Obor Fyzika pevných látek a magnetismus
Klíčová slova amorphous silicon; doping; metastability
Popis The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role.
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