Lattice constants and optical response of pseudomorph Si-rich SiGe:B
| Authors | |
|---|---|
| Year of publication | 2013 |
| Type | Article in Periodical |
| Magazine / Source | Applied Physics Letters |
| MU Faculty or unit | |
| Citation | |
| Doi | http://dx.doi.org/10.1063/1.4830367 |
| Field | Solid matter physics and magnetism |
| Keywords | silicon; SiGe alloys; heavy doping |
| Description | Pseudomorph epitaxial films of Si1-xGex:B were grown on undoped (100) Si for x<0.026 and the B concentration of 1.3E20 cm-3. The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized 11B and 10B vibrations have been observed. The spectral shift of E1 electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra. |
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