Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

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Authors	VON KÄNEL Hans ISA Fabio FALUB Claudiu Valentin BARTHAZY E. J. MÜLLER Elisabeth CHRASTINA Daniel ISELLA Giovanni KREILIGER Thomas TABOADA Alfonso MEDUŇA Mojmír KAUFMANN R. NEELS A. DOMMANN Alex NIEDERMANN Philippe MANCARELLA F. MAUCERI M. PUGLISI M. CRIPPA D. LA VIA F. ANZALONE R. PILUSO N. BERGAMASCHINI Roberto MARZEGALLI Anna MIGLIO Leo
Year of publication	2014
Type	Article in Proceedings
Conference	SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES
MU Faculty or unit	Central European Institute of Technology
Citation
Web	http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract
Doi	http://dx.doi.org/10.1149/06406.0631ecst
Field	Solid matter physics and magnetism
Keywords	Aspect ratio; Chemical vapor deposition; Crystals; Dislocations; Germanium; Silicon; heteroepitaxy
Description	We have recently demonstrated for the example of Ge/Si(001) that crystal defects, wafer bowing can be avoided by combining deep substrate patterning, resulting in dense arrays of highly perfect three-dimensional epitaxial crystals. Here we discuss the extension of the method to layer/substrate combinations with lattice misfits ranging from zero for pure Si/Si(001) up to 20% for 3C-SiC/Si(001).
Related projects:	CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies