Temperature Dependence of the Optical Spectra of SiGe Alloys

Warning

This publication doesn't include Faculty of Education. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	HUMLÍČEK Josef PANTELIDES Sokrates T. GARRIGA Miquel ZOLLNER Stefan
Year of publication	2002
Type	Chapter of a book
MU Faculty or unit	Faculty of Science
Citation
Description	The temperature evolution of the interband electronic response of Si1-xGex alloys is reported and analyzed. Our study of the critical-point structure in the complex dielectric function is based mostly on ellipsometric measurements in the 80-800K range. Several ways of obtaining the critical point parameters are used and discussed. We pay special attention to surface overlayers which are the main obstacle in obtaining true optical response functions from the measured data. The temperature changes of critical point energies, broadening parameters, and phase-shifts are tabulated. We discuss the alloy data with a special emphasis on their relations to the results for both constituents, Si and Ge.
Related projects:	Physical properties of new materials and layered structures