Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction

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Authors

HOLÝ Václav

Year of publication 2002
Type Article in Periodical
Magazine / Source Appl. Phys. Lett.
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction; Appl. Phys. Lett. 80; 3521-3523 (2002).
Description Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction
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