Infrared Absorption Spectroscopy of Oxygen Precipitates in Czochralski Silicon

Warning

This publication doesn't include Faculty of Education. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	ŠTOUDEK Richard HUMLÍČEK Josef
Year of publication	2004
Type	Article in Proceedings
Conference	WDS'04 Proceedings of Contributed Papers
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	Infrared; Silicon; Oxygen; Precipitates
Description	We have analysed infrared transmittance spectra of Czochralski silicon. Using measurements at liquid nitrogen temperature we have identified the contribution of oxygen precipitates. The continuum theory of average dielectric constant has been used to determine the shape and volume fraction of these particles.
Related projects:	Physical properties of new materials and layered structures