Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon

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Authors

ŠTOUDEK Richard LORENC Michal HUMLÍČEK Josef

Year of publication 2004
Type Article in Proceedings
Conference Proceedings of The Ninth Scientific and Business Conference SILICON 2004
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords Infrared; Silicon; Oxygen; Precipitates; Nitrogen doping
Description We have analysed infrared transmittance spectra of Czochralski silicon. Using measurements at liquid nitrogen temperature we have identified the contribution of oxygen precipitates of different shapes. An effective-medium model of average dielectric constant has been used to determine the shape, volume fraction and stoichiometry of the precipitates. Standard and nitrogen-doped samples have been measured; we have observed a favourable influence of nitrogen on oxygen precipitation.
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