Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon

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Authors	ŠTOUDEK Richard LORENC Michal HUMLÍČEK Josef
Year of publication	2004
Type	Article in Proceedings
Conference	Proceedings of The Ninth Scientific and Business Conference SILICON 2004
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	Infrared; Silicon; Oxygen; Precipitates; Nitrogen doping
Description	We have analysed infrared transmittance spectra of Czochralski silicon. Using measurements at liquid nitrogen temperature we have identified the contribution of oxygen precipitates of different shapes. An effective-medium model of average dielectric constant has been used to determine the shape, volume fraction and stoichiometry of the precipitates. Standard and nitrogen-doped samples have been measured; we have observed a favourable influence of nitrogen on oxygen precipitation.
Related projects:	Physical properties of new materials and layered structures