Carbon nanotubes deposition by plasma enhanced chemical vapor deposition
| Authors | |
|---|---|
| Year of publication | 2006 |
| Type | Article in Proceedings |
| Conference | Proceedings Electronic devices and systems 2006 IMAPS CS International Conference |
| MU Faculty or unit | |
| Citation | |
| Field | Plasma physics |
| Keywords | carbon nanotubes; plasma enhanced chemical vapor depostion; catalyst; electron microscopy |
| Description | Carbon nanotube properties provoked interest in many fields of application but there is still need to develop deposition techniques, which enable precise control of nanotubes positioning, alignment and properties. Chemical vapor deposition (CVD) methods and lately also plasma enhanced CVD (PECVD) are most promising to reach this goal. In the first part of the article we will briefly describe carbon nanotubes structure and properties and review the necessary conditions and possible control mechanisms used in PECVD deposition method. In the second part, examples of two deposition techniques, one working at a low pressure and one at an atmospheric pressure, will be described and reached results analyzed. |
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