STACKING FAULTS AND DISLOCATION DISSOCIATION IN MoSi2

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Authors	ČÁK Miroslav ŠOB Mojmír PAIDAR Václav VÍTEK Václav
Year of publication	2009
Type	Article in Proceedings
Conference	Advanced Intermetallic-Based Alloys for Extreme Environment and Energy Applications
MU Faculty or unit	Faculty of Science
Citation
Web	http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=16789&DID=217001
Field	Solid matter physics and magnetism
Keywords	stacking faults; dislocation dissociation; molybdenum disilicide
Description	We present the g-surfaces for the (013) and (110) planes calculated by employing the density functional based method as implemented in the VASP code. While there is only one minimum on the (110) g-surface, three distinct minima have been found on the (013) g-surface. These minima, which determine three types of possible stacking faults on the (013) plane, are not symmetry dictated and thus the fault vectors are to a great extent controlled by the details of the interatomic bonding in MoSi2
Related projects:	Physical and chemical properties of advanced materials and structures Theoretical studies of grain boundaries with point defects and their aggregates