Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction

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Authors	MEDUŇA Mojmír CAHA Ondřej KEPLINGER Mario STANGL Julian BAUER Günther MUSSLER Gregor GRÜTZMACHER Detlev
Year of publication	2009
Type	Article in Periodical
Magazine / Source	Physica stat.sol.(a)
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	interdiffusion; x-ray diffraction; multilayers
Description	We have investigated SiGe/Si multilayers with Ge content 70% and 90% annealed in-situ at temperatures in the range 600-700 C by x-ray diffraction.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon Strain engineering in diluted magnetic semiconductors