Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films

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Authors

FRANTA Daniel NEČAS David OHLÍDAL Ivan HRDLIČKA Martin PAVLIŠTA Martin FRUMAR Miloslav OHLÍDAL Miloslav

Year of publication 2009
Type Article in Periodical
Magazine / Source Journal of Optoelectronics and Advanced Materials
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords elipsometrie; spektrofotometrie; chalkogenidy; tenké vrstvy
Description The optical characterisation of the As33Se67 and Ge2Sb2Te5 chalcogenide thin films is carried out using the combined method of VASE and SR. This method permits to determine both structural and dispersion parameters describing the thin films exhibiting various defects. The structural model is based on including roughness, overlayers and thickness non-uniformity. The dispersion models are based on parametrisation of the joint density of states. These models, unlike the classical models derived from the Lorentz oscillator model, can describe finite bands which allows to introduce a parameter proportional to the density of electrons. It is shown that this method enables to investigate quantitatively changes in the electronic structure of the materials caused by phase transitions which is demonstrated on the Ge2Sb2Te5. It is shown that the combined method with including true structural and dispersion models is a powerful tool for the optical characterisation of thin films exhibiting disordered structure.
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