Modification of (111) and (100) silicon in atmospheric pressure plasma
| Autoři | |
|---|---|
| Rok publikování | 2014 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Applied Surface Science |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://www.sciencedirect.com/science/article/pii/S0169433214009726# |
| Doi | http://dx.doi.org/10.1016/j.apsusc.2014.05.196 |
| Obor | Fyzika plazmatu a výboje v plynech |
| Klíčová slova | Atmospheric pressure plasma; DCSBD; Crystalline silicon wafer; Plasma activation; Plasma roughening; Wettability |
| Popis | In this paper the effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface, (1 0 0) plane and (1 1 1) plane is studied. Plasma treatment was realized in atmospheric pressure plasma generated by diffuse coplanar surface barrier discharge in ambient air. The changes of surface morphology, wettability and chemical structure were investigated by means of the AFM measurement, contact angle measurement and XPS, respectively. It was proved that plasma roughening of c-Si depends on the crystallographic orientation. The wettability of c-Si after plasma treatment was improved independently on the orientation however oxidation of Si surface was also observed. (C) 2014 Elsevier B.V. All rights reserved. |
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