Planar defects and dislocations in transition-metal disilicides

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Publikace nespadá pod Pedagogickou fakultu, ale pod Středoevropský technologický institut. Oficiální stránka publikace je na webu muni.cz.
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PAIDAR Václav ČÁK M. ŠOB Mojmír INUI H.

Rok publikování 2015
Druh Článek v odborném periodiku
Časopis / Zdroj Intermetallics
Fakulta / Pracoviště MU

Středoevropský technologický institut

Citace
www http://ac.els-cdn.com/S0966979514002908/1-s2.0-S0966979514002908-main.pdf?_tid=a54345b6-9413-11e5-bfbf-00000aacb35e&acdnat=1448524960_7fd68515c22eadb9213dfad24a34b3a8
Doi http://dx.doi.org/10.1016/j.intermet.2014.11.003
Obor Fyzika pevných látek a magnetismus
Klíčová slova Intermetallics; Dislocation structure; Planar faults; Ab-initio calculations
Popis The structures of transition-metal disilicides are constituted of different stacking of identical atomic planes at four different positions A, B, C, D: AB in C11(b) structure of e.g. MoSi2, ABC in C40 structure of e.g. VSi2 and ABDC in C54 structure of e.g. TiSi2 disilicides. In comparison with the FCC lattice with the ABC atomic plane stacking along the <111> directions, the occurrence of the fourth position, D, essentially alters the properties of defects and consequently the mechanical properties. The effect of generalized planar defects and their impacts on the dislocation core structures are discussed. In particular, we examine stacking faults and related partial dislocations on the basal planes in different types of disilicides as well as the related twin boundaries and dissociated dislocations. Our analysis of the stacking-fault-like defects is based on the calculations of gamma-surfaces using ab initio methods. Predictions of possible metastable defects in all types of disilicides are reported. (C) 2014 Elsevier Ltd. All rights reserved.
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