Perfect crystals grown from imperfect interfaces
| Authors | |
|---|---|
| Year of publication | 2013 |
| Type | Article in Periodical |
| Magazine / Source | Scientific Reports |
| MU Faculty or unit | |
| Citation | |
| Web | http://www.nature.com/srep/2013/130724/srep02276/full/srep02276.html |
| Doi | http://dx.doi.org/10.1038/srep02276 |
| Field | Solid matter physics and magnetism |
| Keywords | electronic devices; semiconductors; imaging techniques |
| Description | We prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily islocated interface. |
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