Perfect crystals grown from imperfect interfaces

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Authors

FALUB Claudiu Valentin MEDUŇA Mojmír CHRASTINA Daniel ISA Fabio MARZEGALLI Anna KREILIGER Thomas TABOADA Alfonso ISELLA Giovanni MIGLIO Leo DOMMANN Alex VON KAENEL Hans

Year of publication 2013
Type Article in Periodical
Magazine / Source Scientific Reports
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://www.nature.com/srep/2013/130724/srep02276/full/srep02276.html
Doi http://dx.doi.org/10.1038/srep02276
Field Solid matter physics and magnetism
Keywords electronic devices; semiconductors; imaging techniques
Description We prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily islocated interface.
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