3D Heteroepitaxy of Mismatched Semiconductors on Silicon
| Authors | |
|---|---|
| Year of publication | 2014 |
| Type | Article in Periodical |
| Magazine / Source | Thin Solid Films |
| MU Faculty or unit | |
| Citation | |
| web | http://www.sciencedirect.com/science/article/pii/S0040609013017057 |
| Doi | http://dx.doi.org/10.1016/j.tsf.2013.10.094 |
| Field | Solid matter physics and magnetism |
| Keywords | Monolithic integration; Epitaxial growth; Ge; GaAs; Patterned Si substrates; Scanning X-ray nano-diffraction; Room-temperature photoluminescence; X-ray detectors |
| Description | We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals. |
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