Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

Investor logo
Investor logo

Warning

This publication doesn't include Faculty of Education. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.
Authors

ISA F. SALVALAGLIO M. DASILVA YAR. MEDUŇA Mojmír BARGET M. JUNG A. KREILIGER T. CANO I RUIZ Gisella ERNI R. PEZZOLI F. BONERA E. NIEDERMANN P. GRONING P. MONTALENTI F. VON KAENEL Hans

Year of publication 2016
Type Article in Periodical
Magazine / Source ADVANCED MATERIALS
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://onlinelibrary.wiley.com/doi/10.1002/adma.201504029/abstract
Doi http://dx.doi.org/10.1002/adma.201504029
Field Solid matter physics and magnetism
Keywords heteroepitaxy; heterostructures; strain relaxation; SiGe; substrate patterning
Description Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.