Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

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Authors

KLENOVSKÝ Petr KŘÁPEK Vlastimil HUMLÍČEK Josef

Year of publication 2016
Type Article in Periodical
Magazine / Source ACTA PHYSICA POLONICA A
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap12.pdf
Doi http://dx.doi.org/10.12693/APhysPolA.129.A-62
Field Solid matter physics and magnetism
Keywords quantum dots; type-II bandalignment; quantum computing; theory
Description We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 ueV/325 ueV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.
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