Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals

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Authors

MEDUŇA Mojmír ISA Fabio JUNG Arik MARZEGALLI Anna ALBANI Marco ISELLA Giovanni ZWEIACKER Kai MIGLIO Leo VON KÄNEL Hans

Year of publication 2018
Type Article in Periodical
Magazine / Source Journal of Applied Crystallography
MU Faculty or unit

Faculty of Science

Citation
Web https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576718001450
Doi http://dx.doi.org/10.1107/S1600576718001450
Field Solid matter physics and magnetism
Keywords scanning X-ray nanodiffraction; lattice bending; graded SiGe microcrystals; strain relaxation
Description The scanning X-ray nanodiffraction technique is used to reconstruct the three- dimensional (3D) distribution of lattice strain and Ge concentration in compositionally graded Si1-xGex microcrystals epitaxially grown on Si pillars.
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