Excitonic effects at the temperature-dependent direct bandgap of Ge

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Authors

EMMINGER Carola SAMARASINGHA Nuwanjula S. ARIAS Melissa Rivero ABADIZAMAN Farzin MENÉNDEZ José ZOLLNER Stefan

Year of publication 2022
Type Article in Periodical
Magazine / Source Journal of Applied Physics
MU Faculty or unit

Faculty of Science

Citation
Web https://aip.scitation.org/doi/abs/10.1063/5.0080158
Doi http://dx.doi.org/10.1063/5.0080158
Keywords Dielectrics; Energy gap; Linear filters; Room temperature; Spectroellipsometry; Temperature; Temperature dependence
Description The temperature dependence of the complex dielectric function ??1+????2 of bulk Ge near the direct bandgap was investigated with spectroscopic ellipsometry at temperatures between 10 and 710?K. Second derivatives of the dielectric function with respect to energy are obtained using a digital linear filter method. A model that incorporates excitonic effects using the Tanguy model for the Hulthén potential [C. Tanguy, Phys. Rev. B 60, 10660 (1999)] was used to fit the dielectric function and its second derivatives simultaneously. Using ??·?? theory and literature values for effective masses, reasonable agreement with the experiment is obtained for ??2 up to room temperature using the direct bandgap and its broadening as the only adjustable parameters.
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