GaAs quantum dots under quasiuniaxial stress: Experiment and theory
| Authors | |
|---|---|
| Year of publication | 2023 |
| Type | Article in Periodical |
| Magazine / Source | Physical Review B |
| MU Faculty or unit | |
| Citation | |
| Web | https://doi.org/10.1103/PhysRevB.107.235412 |
| Doi | http://dx.doi.org/10.1103/PhysRevB.107.235412 |
| Keywords | Elasticity; Electronic structure; Excitons; Fermions; Lifetimes and widths; Luminescence; Nonlocality; Quantum cryptography; Stress |
| Description | The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k·p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed. |
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