MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING

Authors

SLÁDEK Petr SŤAHEL Pavel ŠŤASTNÝ Jiří PŘIKRYL Radek

Year of publication 2000
Type Article in Proceedings
Conference Electronic Devices and Systems Y2K
MU Faculty or unit

Faculty of Education

Citation
Field Solid matter physics and magnetism
Keywords Light scattering; Si thin film ; Photocurrent
Description We use photocurrent and photothermal deflection spectroscopies to study defects in amorphous, polymorphous and microcrystalline Si thin films. Enhanced light absorption in mc-Si, nc-Si and pm-Si films is due to the several contributions, one of which is the light scattering. For the estimation of the influence of the light scattering on the standard CPM measurements we use the innovation method of the "outside" induced excess current, when the probing beam is impinging outside the region with the electric field (between electrodes).
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