MODIFICATIONS OF THE OPTICAL PARAMETERS OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING
| Authors | |
|---|---|
| Year of publication | 2000 |
| Type | Article in Proceedings |
| Conference | Electronic Devices and Systems Y2K |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | Light scattering; Si thin film ; Photocurrent |
| Description | We use photocurrent and photothermal deflection spectroscopies to study defects in amorphous, polymorphous and microcrystalline Si thin films. Enhanced light absorption in mc-Si, nc-Si and pm-Si films is due to the several contributions, one of which is the light scattering. For the estimation of the influence of the light scattering on the standard CPM measurements we use the innovation method of the "outside" induced excess current, when the probing beam is impinging outside the region with the electric field (between electrodes). |
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