Nitrogen in Czochralski-grown silicon

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Authors

ŠIK Jan LORENC Michal ŠTOUDEK Richard

Year of publication 2002
Type Article in Proceedings
Conference SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords silicon; nitrogen
Description Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectroscopy (SIMS) are used to study nitrogen-doped Czochralski-grown (CZ) crystal. We observe nitrogen-related vibrational modes typical for CZ silicon and estimate nitrogen content to be 1.6x10^15 cm-3 from its quantitative analysis. This value is in a good agreement with result of 2.4x10^15 cm-3 from calculations assuming constant segregation coefficient 7x10^(-4). On the other hand, SIMS measurements give much higher value of 8.3x10^15 cm-3. Only 4-5% of nitrogen occupy substitutional sites. We also observe an obstruction of dislocation movement during crystal cooling.
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