Electrical Properties of SiOxHyCz Coatings Prepared by PECVD

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Authors

FRANCLOVÁ Jana KUČEROVÁ Zuzana BURŠÍKOVÁ Vilma

Year of publication 2005
Type Article in Proceedings
Conference 15th Symposium on Aplications of Plasma Processes
MU Faculty or unit

Faculty of Science

Citation
Field Plasma physics
Keywords thin films; electrical properties
Description It is well known that MIM structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction) [1]. Thin films prepared using PECVD exhibited Pool-Frenkel conductivity at lower voltages and tunnelling at higher voltages. This behaviour was indicated by a linear dependence of lnI on U1/2 or lnI on 1/U, where I is the current and U is the applied voltage.
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