Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation

Investor logo

Warning

This publication doesn't include Faculty of Education. It includes Faculty of Science. Official publication website can be found on muni.cz.
Authors

FRGALA Zdeněk JAŠEK Ondřej KARÁSKOVÁ Monika ZAJÍČKOVÁ Lenka BURŠÍKOVÁ Vilma FRANTA Daniel MATĚJKOVÁ Jiřina REK Antonin KLAPETEK Petr BURŠÍK Jiří

Year of publication 2006
Type Article in Periodical
Magazine / Source Czechoslovak Journal of Physics B
MU Faculty or unit

Faculty of Science

Citation
Field Plasma physics
Keywords nanocrystalline diamond; plasma enhanced chemical vapor deposition; self-bias
Description Nanocrystalline diamond film was deposited by microwave CVD in the ASTeX type reactor on a mirror polished (111) oriented n-doped silicon substrate. The deposition mixture consisted of 9 % of methane in hydrogen. The applied microwave power (2.45 GHz) and pressure were 850 W and 7.5 kPa, respectively. The substrate temperature was 1 090 K. The diamond nucleation process was enhanced by rf induced dc self {bias of -125 V. The film exhibited very low roughness (rms of heights 9.1 nm). Its hardness and elastic modules were 70 and 375 GPa, respectively. The optical constants were determined by combination of spectroscopic ellipsometry and reflectometry employing the Rayleigh-Rice theory for the roughness and the dispersion model of optical constants based on the parameterization of densities of states. The deposition rate was 57 nm/min including the 5 min nucleation step.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.