Defect Engineering in Czochralski-grown Silicon Studied by TEM

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Authors	SVOBODA Milan BURŠÍK Jiří MEDUŇA Mojmír CAHA Ondřej KUBĚNA Josef
Year of publication	2010
Type	Conference abstract
MU Faculty or unit	Faculty of Science
Citation
Description	As a part of a complex study of nucleation and growth of oxygen precipitates in Czochralski-grown silicon this work reports our latest results obtained by TEM.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon