Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

Investor logo

Warning

This publication doesn't include Faculty of Education. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.
Authors

SCHMIDBAUER Martin UGUR Asli WOLLSTEIN C. HATAMI Fariba KATMIS Ferhat CAHA Ondřej MASSELINK W. T.

Year of publication 2012
Type Article in Periodical
Magazine / Source Journal of Applied Physics
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
Doi http://dx.doi.org/10.1063/1.3677995
Field Solid matter physics and magnetism
Keywords LAYERS; ENHANCEMENT; GAINP; DOTS
Description The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.