Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

Warning

This publication doesn't include Faculty of Education. It includes Central European Institute of Technology. Official publication website can be found on muni.cz.

Authors	SCHMIDBAUER Martin UGUR Asli WOLLSTEIN C. HATAMI Fariba KATMIS Ferhat CAHA Ondřej MASSELINK W. T.
Year of publication	2012
Type	Article in Periodical
Magazine / Source	Journal of Applied Physics
MU Faculty or unit	Central European Institute of Technology
Citation
Web	http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
Doi	http://dx.doi.org/10.1063/1.3677995
Field	Solid matter physics and magnetism
Keywords	LAYERS; ENHANCEMENT; GAINP; DOTS
Description	The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
Related projects:	Physical and chemical properties of advanced materials and structures Strain engineering in diluted magnetic semiconductors Struktura, elektronová struktura a optická odezva pokročilých materiálů